Invention Grant
- Patent Title: Grain growth for solar cells
- Patent Title (中): 太阳能电池的晶粒生长
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Application No.: US14447526Application Date: 2014-07-30
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Publication No.: US09466754B2Publication Date: 2016-10-11
- Inventor: Taeseok Kim
- Applicant: Taeseok Kim
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/18 ; B29D11/00 ; H01L31/028 ; H01L31/0368

Abstract:
A solar cell can include a silicon layer formed over a silicon substrate. The silicon layer can have a P-type doped region and an N-type doped region. Portions of the silicon layer can have a grain size larger than other portions of the silicon layer. For example, larger grains of the silicon layer formed within a depletion region between P-type and N-type doped regions can minimize recombination loss at the P-type and N-type doped region boundaries and improve solar cell efficiency.
Public/Granted literature
- US20160035930A1 GRAIN GROWTH FOR SOLAR CELLS Public/Granted day:2016-02-04
Information query
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