Invention Grant
US09466790B2 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
有权
具有垂直位线的可重新编程的非易失性存储元件的三维阵列
- Patent Title: Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
- Patent Title (中): 具有垂直位线的可重新编程的非易失性存储元件的三维阵列
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Application No.: US14933672Application Date: 2015-11-05
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Publication No.: US09466790B2Publication Date: 2016-10-11
- Inventor: George Samachisa
- Applicant: SanDisk 3D LLC
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L45/00 ; B82Y10/00 ; G11C11/56 ; G11C13/00 ; G11C13/02 ; H01L27/24 ; G11C16/10 ; G11C11/06
Abstract:
A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.
Public/Granted literature
- US20160072058A1 THREE-DIMENSIONAL ARRAY OF RE-PROGRAMMABLE NON-VOLATILE MEMORY ELEMENTS HAVING VERTICAL BIT LINES Public/Granted day:2016-03-10
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