Invention Grant
- Patent Title: Nonequilibrium pulsed femtosecond semiconductor disk laser
- Patent Title (中): 非平衡脉冲飞秒半导体圆盘激光器
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Application No.: US14847908Application Date: 2015-09-08
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Publication No.: US09466948B2Publication Date: 2016-10-11
- Inventor: Jerome V. Moloney , Isak R. Kilen , Stephen W. Koch
- Applicant: The Arizona Board of Regents on behalf of the University of Arizona
- Applicant Address: US AZ Tucson
- Assignee: THE ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIVERSITY OF ARIZONA
- Current Assignee: THE ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIVERSITY OF ARIZONA
- Current Assignee Address: US AZ Tucson
- Agency: Quarles & Brady LLP
- Agent Yakov Sidorin
- Main IPC: H01S3/098
- IPC: H01S3/098 ; H01S5/34 ; H01S5/042 ; H01S5/065 ; H01S5/187 ; H01S3/11 ; H01S3/06

Abstract:
A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, separated along the optical axis by a sub-wavelength distance. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.
Public/Granted literature
- US20160087407A1 NONEQUILIBRIUM PULSED FEMTOSECOND SEMICONDUCTOR DISK LASER Public/Granted day:2016-03-24
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