Invention Grant
- Patent Title: Non-volatile memory device
- Patent Title (中): 非易失性存储器件
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Application No.: US14183732Application Date: 2014-02-19
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Publication No.: US09472277B2Publication Date: 2016-10-18
- Inventor: Tetsuji Kunitake
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C5/02

Abstract:
According to one embodiment, a non-volatile memory device includes: first memory cell regions including first wirings extending in a first direction, second wirings extending in a second direction crossing the first direction, and first memory cells provided between the first wirings and the second wirings and being capable of changing resistance state; and second memory cell regions including third wirings extending in the first direction, fourth wirings extending in the second direction crossing the first direction, and second memory cells provided between the third wirings and the fourth wirings and being capable of changing resistance state, the second memory cell region having a smaller area than the first memory cell region in top view.
Public/Granted literature
- US20150117088A1 NON-VOLATILE MEMORY DEVICE Public/Granted day:2015-04-30
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