Invention Grant
- Patent Title: Copper or copper alloy target/copper alloy backing plate assembly
- Patent Title (中): 铜或铜合金靶/铜合金背板组件
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Application No.: US10596653Application Date: 2004-11-30
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Publication No.: US09472383B2Publication Date: 2016-10-18
- Inventor: Takeo Okabe , Hirohito Miyashita
- Applicant: Takeo Okabe , Hirohito Miyashita
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson, LLP
- Priority: JP2003-428520 20031225
- International Application: PCT/JP2004/017744 WO 20041130
- International Announcement: WO2005/064036 WO 20050714
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C22C9/10 ; C22C9/06 ; C22C25/00

Abstract:
Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu—Ni—Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.
Public/Granted literature
- US20070051624A1 Copper or copper alloy target/copper alloy backing plate assembly Public/Granted day:2007-03-08
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