Power semiconductor switch with plurality of trenches

Invention Grant

US09472403B2 Power semiconductor switch with plurality of trenches 有权

Title translation: 功率半导体开关具有多个沟槽

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Patent Title: Power semiconductor switch with plurality of trenches
Patent Title (中): 功率半导体开关具有多个沟槽
Application No.: US12946787

Application Date: 2010-11-15
Publication No.: US09472403B2

Publication Date: 2016-10-18
Inventor: Rossano Carta , Laura Bellemo , Giovanni Richieri , Luigi Merlin
Applicant: Rossano Carta , Laura Bellemo , Giovanni Richieri , Luigi Merlin
Applicant Address: SG Singapore
Assignee: SILICONIX TECHNOLOGY C.V.
Current Assignee: SILICONIX TECHNOLOGY C.V.
Current Assignee Address: SG Singapore
Main IPC: H01L29/66
IPC: H01L29/66 ; H01L21/04 ; H01L29/06 ; H01L29/10 ; H01L29/808

Power semiconductor switch with plurality of trenches

Abstract:

A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.

Abstract(Chinese):

一种SiC JFET，其包括形成在一个导电性的SiC半导体主体中的多个沟槽，每个沟槽具有形成在其底部和侧壁中的另一导电区域。

Public/Granted literature

US20110278591A1 POWER SEMICONDUCTOR SWITCH Public/Granted day:2011-11-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的