A semiconductor device is disclosed. The semiconductor comprises a field effect transistor (FET) provided in a substrate, the FET including a plurality of gates, sources, and drains each extending in parallel along a longitudinal direction of the gates, the sources, and the drains; an upper electrode provided above the substrate with an insulating layer therebetween, the upper electrode having an opening where the FET is disposed, and a plurality of source extractions each connected to respective sources through via structures passing the insulating layer and to the upper electrode, the source extractions extending along the longitudinal direction.