Invention Grant
US09472503B2 Ultrathin superlattice of MnO/Mn/MnN and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects
有权
MnO / Mn / MnN和其他金属氧化物/金属/金属氮化物衬垫和铜低介电常数互连盖的超薄超晶格
- Patent Title: Ultrathin superlattice of MnO/Mn/MnN and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects
- Patent Title (中): MnO / Mn / MnN和其他金属氧化物/金属/金属氮化物衬垫和铜低介电常数互连盖的超薄超晶格
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Application No.: US14884193Application Date: 2015-10-15
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Publication No.: US09472503B2Publication Date: 2016-10-18
- Inventor: Donald F. Canaperi , Daniel C. Edelstein , Alfred Grill , Son V. Nguyen , Takeshi Nogami , Deepika Priyadarshini , Hosadurga Shobha
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Steven Meyers
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L29/872 ; H01L29/739 ; H01L23/528 ; H01L21/285
Abstract:
An electrical device including an opening in a low-k dielectric material, and a copper including structure present within the opening for transmitting electrical current. A liner is present between the opening and the copper including structure. The liner includes a superlattice structure comprised of a metal oxide layer, a metal layer present on the metal oxide layer, and a metal nitride layer that is present on the metal layer. A first layer of the superlattice structure that is in direct contact with the low-k dielectric material is one of said metal oxide layer and a final layer of the superlattice structure that is in direct contact with the copper including structure is one of the metal nitride layers.
Public/Granted literature
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