Invention Grant
US09472512B1 Integrated circuits with contacts through a buried oxide layer and methods of producing the same 有权
具有通过掩埋氧化物层的触点的集成电路及其制造方法

Integrated circuits with contacts through a buried oxide layer and methods of producing the same
Abstract:
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate, where the substrate includes a buried oxide (BOX) layer positioned between a handle layer and a semiconductor layer. An electronic component overlies the buried oxide layer on a semiconductor layer side, and a gate line is electrically connected to the electronic component. A body line is also electrically connected to the electronic component. A first through BOX contact electrically connects the gate line with the handle layer, and a second through BOX contact electrically connects the body line with the handle layer.
Information query
Patent Agency Ranking
0/0