Invention Grant
US09472512B1 Integrated circuits with contacts through a buried oxide layer and methods of producing the same
有权
具有通过掩埋氧化物层的触点的集成电路及其制造方法
- Patent Title: Integrated circuits with contacts through a buried oxide layer and methods of producing the same
- Patent Title (中): 具有通过掩埋氧化物层的触点的集成电路及其制造方法
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Application No.: US14883100Application Date: 2015-10-14
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Publication No.: US09472512B1Publication Date: 2016-10-18
- Inventor: Rui Tze Toh , Guan Huei See , Shaoqiang Zhang , Purakh Raj Verma
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Lorenz & Kopf, LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L23/64 ; H01L27/06 ; H01L29/06 ; H01L23/522 ; H01L23/528 ; H01L23/66 ; H01L21/768

Abstract:
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate, where the substrate includes a buried oxide (BOX) layer positioned between a handle layer and a semiconductor layer. An electronic component overlies the buried oxide layer on a semiconductor layer side, and a gate line is electrically connected to the electronic component. A body line is also electrically connected to the electronic component. A first through BOX contact electrically connects the gate line with the handle layer, and a second through BOX contact electrically connects the body line with the handle layer.
Information query
IPC分类: