Invention Grant
- Patent Title: Semiconductor device manufacturing method and semiconductor device
- Patent Title (中): 半导体器件制造方法和半导体器件
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Application No.: US14785314Application Date: 2013-07-04
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Publication No.: US09472538B2Publication Date: 2016-10-18
- Inventor: Seiichiro Inokuchi , Mitsunori Aiko , Shintaro Araki , Natsuki Tsuji
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2013/068408 WO 20130704
- International Announcement: WO2015/001648 WO 20150108
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L25/18 ; H01L25/07 ; H01L23/051 ; H01L23/31 ; H01L21/56 ; H01L23/433 ; H01L23/495 ; H01L23/00 ; H01L21/48 ; H01L23/367 ; H01L23/48 ; H01L23/50 ; H01L23/522

Abstract:
Fixing a semiconductor element to a substrate, electrically connecting signal and main terminals to the semiconductor element, a terminal aggregate includes a frame portion, the signal terminal, the main terminal, which has a larger width than the signal terminal, and a dummy terminal, and forming a to-be-encapsulated body in which the substrate, the semiconductor element, and the terminal aggregate are integrated, mounting the to-be-encapsulated body on a lower mold half such that a plurality of blocks formed in the lower mold half are meshed with the signal, main, and dummy terminals with no space left therebetween after the mounting, placing a bottom surface of an upper mold half on top surfaces of the plurality of blocks, and top surfaces of the signal, main, and dummy terminals to form a cavity for the substrate and the semiconductor element, and performing molding by injecting mold resin into the cavity are included.
Public/Granted literature
- US20160079221A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE Public/Granted day:2016-03-17
Information query
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