Invention Grant
US09472592B2 Imaging device, electronic apparatus, and method of manufacturing the imaging device having a reduced p-n junction capacity at one or more of a floating diffusion section, source region, or drain region 有权
成像装置,电子装置和制造成像装置的方法,其具有在浮动扩散部分,源极区域或漏极区域中的一个或多个处具有减小的p-n结电容

  • Patent Title: Imaging device, electronic apparatus, and method of manufacturing the imaging device having a reduced p-n junction capacity at one or more of a floating diffusion section, source region, or drain region
  • Patent Title (中): 成像装置,电子装置和制造成像装置的方法,其具有在浮动扩散部分,源极区域或漏极区域中的一个或多个处具有减小的p-n结电容
  • Application No.: US14338851
    Application Date: 2014-07-23
  • Publication No.: US09472592B2
    Publication Date: 2016-10-18
  • Inventor: Harumi IkedaAtsuhiko YamamotoYoshiki EbikoTakeshi Yanagita
  • Applicant: Sony Corporation
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sheridan Ross P.C.
  • Priority: JP2013-157986 20130730
  • Main IPC: H01L27/146
  • IPC: H01L27/146
Imaging device, electronic apparatus, and method of manufacturing the imaging device having a reduced p-n junction capacity at one or more of a floating diffusion section, source region, or drain region
Abstract:
An imaging device includes: a photodiode configured to perform photoelectric conversion and to generate electric charge in accordance with an amount of received light; a floating diffusion section configured to accumulate the electric charge generated in the photodiode; a reading circuit configured to output a pixel signal having a voltage in accordance with a level of the electric charge accumulated in the floating diffusion section, the reading circuit including one or a plurality of transistors each having a gate that is electrically connected to a wiring used for selecting a pixel; and an insulating section extending into part or whole of a bottom surface of the floating diffusion section, part or whole of bottom surfaces of source-drain regions in the one or the plurality of transistors, or both. The photodiode, the floating diffusion section, the reading circuit, and the insulating section are provided in a semiconductor layer.
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