Invention Grant
- Patent Title: Active matrix using hybrid integrated circuit and bipolar transistor
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Application No.: US14717344Application Date: 2015-05-20
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Publication No.: US09472607B2Publication Date: 2016-10-18
- Inventor: Bahman Hekmatshoartabari , Tak H. Ning , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Michael LeStrange
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L23/522 ; H01L27/06 ; H01L27/12 ; H01L29/04 ; H01L29/10 ; H01L29/16 ; H01L29/73 ; H01L29/808 ; G09G3/32
Abstract:
A hybrid integrated circuit device includes a semiconductor-on-insulator substrate having a base substrate, a semiconductor layer and a dielectric layer disposed therebetween, the base substrate being reduced in thickness. First devices are formed in the semiconductor layer, the first devices being connected to first metallizations on a first side of the dielectric layer. Second devices are formed in the base substrate, the second devices being connected to second metallizations formed on a second side of the dielectric layer opposite the first side. A through via connection is configured to connect the first metallizations to the second metallizations through the dielectric layer. Pixel circuits and methods are also disclosed.
Public/Granted literature
- US20150270326A1 ACTIVE MATRIX USING HYBRID INTEGRATED CIRCUIT AND BIPOLAR TRANSISTOR Public/Granted day:2015-09-24
Information query
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