Invention Grant
- Patent Title: Silicon carbide semiconductor device
- Patent Title (中): 碳化硅半导体器件
-
Application No.: US14769472Application Date: 2014-02-04
-
Publication No.: US09472635B2Publication Date: 2016-10-18
- Inventor: Shunsuke Yamada , Taku Horii , Masaki Kijima
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Laura G. Remus
- Priority: JP2013-060076 20130322
- International Application: PCT/JP2014/052543 WO 20140204
- International Announcement: WO2014/148131 WO 20140925
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/49 ; H01L29/40 ; H01L29/45 ; H01L29/66 ; H01L29/16 ; H01L21/28 ; H01L29/417 ; H01L29/12 ; H01L21/336
Abstract:
A silicon carbide semiconductor device includes a silicon carbide substrate, a main electrode, a first barrier layer, and an interconnection layer. The main electrode is directly provided on the silicon carbide substrate. The first barrier layer is provided on the main electrode, and is made of a conductive material containing no aluminum. The interconnection layer is provided on the first barrier layer, is separated from the main electrode by the first barrier layer, and is made of a material containing aluminum.
Public/Granted literature
- US20160027891A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2016-01-28
Information query
IPC分类:
