Invention Grant
- Patent Title: Semiconductor device having electrode made of high work function material and method of manufacturing the same
- Patent Title (中): 具有由高功函数材料制成的电极的半导体器件及其制造方法
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Application No.: US14629338Application Date: 2015-02-23
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Publication No.: US09472637B2Publication Date: 2016-10-18
- Inventor: Sadayoshi Horii , Arito Ogawa , Hideharu Itatani
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2010-002256 20100107
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L21/28 ; H01L49/02 ; H01L29/51 ; H01L23/522 ; H01L21/768
Abstract:
Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes: an insulating film disposed on a substrate; and a metal film disposed on the insulating film to directly contact the insulating film, the metal film including a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated, wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film.
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