A Schottky diode and a method for making one. The method includes the following steps: providing a semiconductor base body, preferably in the form of a wafer, having a high dopant concentration and having a first main surface, which forms the first electrical contact surface of the Schottky diode; epitaxially depositing a semiconductor layer having the same conductivity and a lower dopant concentration on that surface of the semiconductor base body which lies opposite the first main surface; arranging a first metal layer on the semiconductor layer with the formation of a Schottky contact between the first metal layer and the semiconductor layer; connecting a planar contact body to the first metal layer by means of a connecting means; forming at least one individual Schottky diode; and arranging a passivation layer in the edge region of the at least one Schottky diode.