Invention Grant
- Patent Title: Method of manufacturing compound thin-film photovoltaic cell
- Patent Title (中): 制造复合薄膜光伏电池的方法
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Application No.: US14654872Application Date: 2013-12-06
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Publication No.: US09472698B2Publication Date: 2016-10-18
- Inventor: Akihiko Asano
- Applicant: Solar Frontier K.K.
- Applicant Address: JP Tokyo
- Assignee: Solar Frontier K.K.
- Current Assignee: Solar Frontier K.K.
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2012-286187 20121227
- International Application: PCT/JP2013/082884 WO 20131206
- International Announcement: WO2014/103670 WO 20140703
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/0392 ; C23C28/00 ; H01L31/06 ; H01L31/0445 ; H01L31/18

Abstract:
The method of manufacturing a compound thin-film photovoltaic cell includes preparing a metal substrate, whose main constituent is iron, containing aluminium (Al) and chromium (Cr), and forming an insulating layer on an element forming surface of the metal substrate by baking an insulating material; depositing first electrode layer on the insulating layer; depositing a compound light absorption layer on the first electrode layer; and depositing a second electrode layer on the compound light absorption layer, wherein in the forming the insulating layer, an alumina layer is formed at least on a back surface of the metal substrate by thermal oxidation while baking the insulating material.
Public/Granted literature
- US20160197217A1 METHOD OF MANUFACTURING COMPOUND THIN-FILM PHOTOVOLTAIC CELL Public/Granted day:2016-07-07
Information query
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