Invention Grant
- Patent Title: Epitaxial substrate, method of manufacturing the epitaxial substrate and light emitting diode having epitaxial substrate
- Patent Title (中): 外延衬底,外延衬底的制造方法和具有外延衬底的发光二极管
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Application No.: US14836147Application Date: 2015-08-26
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Publication No.: US09472721B2Publication Date: 2016-10-18
- Inventor: Ching-Hsueh Chiu , Ya-Wen Lin , Po-Min Tu , Shih-Cheng Huang
- Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Applicant Address: TW Hsinchu Hsien
- Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee Address: TW Hsinchu Hsien
- Agent Zhigang Ma
- Priority: CN201410441892 20140902
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L21/02 ; C30B29/00 ; H01L33/12 ; H01L33/00 ; H01L33/32

Abstract:
An epitaxial substrate for growing a lighting emitting structure of a light emitting diode, includes a transparent base, a first buffer layer and a second buffer layer formed on the transparent base. The transparent base includes a first surface and a second surface opposite to the first surface. Plural protrusions are formed on the first surface of the transparent base. Each first buffer layer is formed on the outer surfaces of the plural protrusions. The second buffer layer fills in the recesses defined between two adjacent protrusions, and covers the first buffer layer. The refractive index of the first buffer layer is larger than that of the transparent base, and is less than that of the second buffer layer. This disclosure also relates a method for manufacturing the epitaxial substrate and a light emitting diode having the same.
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Information query
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