Invention Grant
US09478285B2 Cross-point memory device including multi-level cells and operating method thereof
有权
包括多电平电池的交叉点存储器件及其操作方法
- Patent Title: Cross-point memory device including multi-level cells and operating method thereof
- Patent Title (中): 包括多电平电池的交叉点存储器件及其操作方法
-
Application No.: US14800060Application Date: 2015-07-15
-
Publication No.: US09478285B2Publication Date: 2016-10-25
- Inventor: Hyun-Kook Park , Chi-Weon Yoon , Dae-Seok Byeon
- Applicant: Hyun-Kook Park , Chi-Weon Yoon , Dae-Seok Byeon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0164414 20141124
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C11/56 ; G11C11/16

Abstract:
A method of operating a cross-point memory device, having an array of multilevel cells, includes performing a first reading operation with respect to the multilevel cells through a plurality of sensing operations to determine a first state and performing a second reading operation with respect to the multilevel cells through a plurality of sensing operations to determine a second state. A difference between a level of a first voltage used in a first sensing operation and a level of a second voltage used in a second sensing operation in the first reading operation is different from a difference between a level of a third voltage used in a first sensing operation and a level of a fourth voltage used in a second sensing operation in the second reading operation.
Public/Granted literature
- US20160148678A1 CROSS-POINT MEMORY DEVICE INCLUDING MULTI-LEVEL CELLS AND OPERATING METHOD THEREOF Public/Granted day:2016-05-26
Information query