Invention Grant
- Patent Title: Programmable memory device sense amplifier
- Patent Title (中): 可编程存储器件读出放大器
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Application No.: US14721854Application Date: 2015-05-26
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Publication No.: US09478308B1Publication Date: 2016-10-25
- Inventor: El Mehdi Boujamaa
- Applicant: INTEL IP CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL IP CORPORATION
- Current Assignee: INTEL IP CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C17/16 ; G11C7/04

Abstract:
Embodiments include circuits, apparatuses, and systems for programmable memory device sense amplifiers. In embodiments, an electronic circuit may include a programmable memory device having a first resistance in a first state and a second resistance in a second state, a reference element, an amplifier to generate a first output signal based at least in part on the resistance of the programmable memory device and a second output signal based at least in part on a current from the reference element, and a comparator to determine a state of the programmable memory device based on the first and second output signals from the amplifier. Other embodiments may be described and claimed.
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