Invention Grant
- Patent Title: Multi-aperture extraction system for angled ion beam
- Patent Title (中): 用于倾斜离子束的多孔径提取系统
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Application No.: US15070880Application Date: 2016-03-15
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Publication No.: US09478399B2Publication Date: 2016-10-25
- Inventor: Alexandre Likhanskii , Svetlana B. Radovanov , William Davis Lee
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H01J37/32

Abstract:
An apparatus for creating an angled ion beam for implanting into a substrate is disclosed. The apparatus includes a plasma chamber in which plasma is created. The extraction aperture includes a plurality of rotatable plates. Ion beamlets are extracted through apertures defined by the plurality of rotatable plates. The degree to which these plates are rotated determines the angle of extraction for the extracted ion beam. These plates may be formed in a plurality of different shapes, which may increase the maximum extraction angle that is achievable. Additionally, electrodes may be disposed near the plates to affect the extraction angle.
Public/Granted literature
- US20160284520A1 MULTI-APERTURE EXTRACTION SYSTEM FOR ANGLED ION BEAM Public/Granted day:2016-09-29
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