Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
- Patent Title (中): 制造半导体器件的方法，衬底处理方法，衬底处理设备和记录介质
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Application No.: US14351785Application Date: 2012-09-24
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Publication No.: US09478413B2Publication Date: 2016-10-25
- Inventor: Satoshi Shimamoto , Yoshiro Hirose , Atsushi Sano
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2011-226852 20111014
- International Application: PCT/JP2012/074408 WO 20120924
- International Announcement: WO2013/054655 WO 20130418
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/205 ; C23C16/36 ; C23C16/455 ; C23C16/452 ; C23C16/509
Abstract:
A thin film that has a predetermined composition and containing predetermined elements is formed on a substrate by performing a cycle of steps a predetermined number of times, said cycle comprising: a step wherein a first layer containing the predetermined elements, nitrogen and carbon is formed on the substrate by alternately performing, a predetermined number of times, a process of supplying a first source gas containing a predetermined element and a halogen group to the substrate and a process of supplying a second source gas containing a predetermined element and an amino group to the substrate; a step wherein a second layer is formed by modifying the first layer by supplying an amine-based source gas to the substrate; and a step wherein a third layer is formed by modifying the second layer by supplying a reaction gas that is different from the source gases to the substrate.
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