Invention Grant
- Patent Title: Device and methods for small trench patterning
- Patent Title (中): 小沟槽图案化的装置和方法
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Application No.: US14802769Application Date: 2015-07-17
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Publication No.: US09478459B2Publication Date: 2016-10-25
- Inventor: Ya Hui Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/28 ; H01L21/311 ; H01L21/8234 ; H01L27/105
Abstract:
A semiconductor device and methods for small trench patterning are disclosed. The device includes a plurality of gate structures, and an etch buffer layer. The etch buffer layer includes an overhang component disposed on the upper portion of the gate structures with an edge that extends laterally. The width between the edges of adjacent overhang components is narrower than the width between adjacent gate structures.
Public/Granted literature
- US20150325471A1 Device And Methods For Small Trench Patterning Public/Granted day:2015-11-12
Information query
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