Invention Grant
- Patent Title: Device and method for improving RF performance
- Patent Title (中): 提高射频性能的装置和方法
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Application No.: US14800650Application Date: 2015-07-15
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Publication No.: US09478463B2Publication Date: 2016-10-25
- Inventor: Haiting Li , Herb He Huang , Qiang Zhou , Hongtao Ge
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend and Stockton LLP
- Priority: CN201410362418 20140728
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L21/768 ; H01L23/66 ; H01L23/48 ; H01L23/00 ; H01L21/84 ; H01L27/12 ; H01L23/13 ; H01L23/522 ; H01L49/02 ; H01L23/31 ; H01L23/20
Abstract:
A semiconductor device and method of fabricating the semiconductor device are provided. The semiconductor device includes a first substrate including a front-end device containing a transistor, a radio frequency (RF) device and a first interconnect structure, and a second substrate containing a cavity disposed at a location corresponding to a location of the RF device. The first substrate and the second substrate are bonded together such that the first surface of the first substrate is facing the cavity in the second substrate, and the cavity is over the RF device. Because of the cavity, the distance between the second substrate and the RF device is relatively large so that the second substrate has less impact on the performance of the RF device, thereby improving the performance of the semiconductor device.
Public/Granted literature
- US20160027665A1 DEVICE AND METHOD FOR IMPROVING RF PERFORMANCE Public/Granted day:2016-01-28
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