Invention Grant
- Patent Title: Method for manufacturing through-hole silicon via
- Patent Title (中): 制造通孔硅通孔的方法
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Application No.: US14888674Application Date: 2014-04-30
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Publication No.: US09478464B2Publication Date: 2016-10-25
- Inventor: Heui Gyun Ahn , Sang Wook Ahn , Yong Woon Lee , Huy Chan Jung , Do Young Lee
- Applicant: SILICONFILE TECHNOLOGIES INC.
- Applicant Address: KR Gyeonggi-do
- Assignee: SILICONFILE TECHNOLOGIES INC.
- Current Assignee: SILICONFILE TECHNOLOGIES INC.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0049781 20130503
- International Application: PCT/KR2014/003829 WO 20140430
- International Announcement: WO2014/178638 WO 20141106
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/306 ; H01L21/683
Abstract:
A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.
Public/Granted literature
- US20160163595A1 METHOD FOR MANUFACTURING THROUGH-HOLE SILICON VIA Public/Granted day:2016-06-09
Information query
IPC分类:
