Invention Grant
- Patent Title: Metal gate structure and method
- Patent Title (中): 金属门结构及方法
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Application No.: US14956071Application Date: 2015-12-01
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Publication No.: US09478466B2Publication Date: 2016-10-25
- Inventor: Hsiu-Jung Yen , Jen-Pan Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L49/02 ; H01L27/06 ; H01L21/306 ; H01L21/31 ; H01L21/3205 ; H01L21/321 ; H01L21/3213 ; H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L29/51
Abstract:
A method comprises removing a dummy gate electrode layer to form a gate trench in a dielectric layer over a substrate, forming a resistor trench over the substrate, depositing a plurality of films on a bottom of the gate trench, a bottom of the resistor trench, sidewalls of the gate trench and sidewalls of the resistor trench, depositing a gate electrode layer over the plurality of films and removing an upper portion of the gate electrode layer until the gate electrode layer is removed from the resistor trench.
Public/Granted literature
- US20160086856A1 Metal Gate Structure and Method Public/Granted day:2016-03-24
Information query
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