A semiconductor structure includes non-metal semiconductor alloy containing contact structures for an n-type field effect transistor (nFET) and a metal semiconductor alloy containing contact structures for a p-type field effect transistor (pFET). Notably, each non-metal semiconductor alloy containing contact structure includes a titanium liner that directly contacts a topmost surface of a source/drain region of the nFET, while each metal semiconductor alloy containing contact structure includes a Ni—Pt semiconductor alloy contact that directly contacts a surface of a source/drain region of the pFET.