Invention Grant
- Patent Title: Grids in backside illumination image sensor chips and methods for forming the same
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Application No.: US15018603Application Date: 2016-02-08
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Publication No.: US09478581B2Publication Date: 2016-10-25
- Inventor: Shiu-Ko JangJian , Min Hao Hong , Ting-Chun Wang , Chung-Ren Sun
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L27/146

Abstract:
A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.
Public/Granted literature
- US20160155771A1 Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same Public/Granted day:2016-06-02
Information query
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