Invention Grant
- Patent Title: Semiconductor device with an interconnect structure and method for forming the same
- Patent Title (中): 具有互连结构的半导体器件及其形成方法
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Application No.: US14576497Application Date: 2014-12-19
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Publication No.: US09478626B2Publication Date: 2016-10-25
- Inventor: Guo-Chiang Chi , Chia-Der Chang , Chih-Hung Lu , Wei-Chin Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/45 ; H01L29/49 ; H01L29/06 ; H01L29/78 ; H01L21/28 ; H01L21/311 ; H01L21/3213
Abstract:
A semiconductor device structure and method for forming the semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate electrode formed on the substrate. The semiconductor device structure also includes a first contact structure including a first portion and a second portion. The first portion of the first contact structure is formed in the gate electrode, and the second portion is formed on the first portion.
Public/Granted literature
- US20160181386A1 SEMICONDUCTOR DEVICE WITH AN INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2016-06-23
Information query
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