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US09478718B2 Light emitting device 有权
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Light emitting device
Abstract:
A light emitting device includes a substrate and a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer provided in a first direction on the substrate. A first electrode layer is provided over the first conductive type semiconductor layer, and a second electrode layer is provided in a second direction over the second conductive type semiconductor layer. The second electrode layer has an energy band gap wider than an energy band gap of the active layer.
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