Invention Grant
- Patent Title: Light emitting device
- Patent Title (中): 发光装置
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Application No.: US13973206Application Date: 2013-08-22
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Publication No.: US09478718B2Publication Date: 2016-10-25
- Inventor: Dong Ha Kim
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Ked & Associates, LLP
- Priority: KR10-2012-0093016 20120824
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/58 ; H01L33/14 ; H01L33/38 ; H01L33/40 ; H01L33/42

Abstract:
A light emitting device includes a substrate and a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer provided in a first direction on the substrate. A first electrode layer is provided over the first conductive type semiconductor layer, and a second electrode layer is provided in a second direction over the second conductive type semiconductor layer. The second electrode layer has an energy band gap wider than an energy band gap of the active layer.
Public/Granted literature
- US20140054633A1 LIGHT EMITTING DEVICE Public/Granted day:2014-02-27
Information query
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