Invention Grant
US09478739B2 Fabricating electronic device including a semiconductor memory that comprises an inter-layer dielectric layer with first and second nitride layer over stacked structure
有权
制造包括半导体存储器的电子器件，该半导体存储器包括层叠结构之后的第一和第二氮化物层的层间电介质层
- Patent Title: Fabricating electronic device including a semiconductor memory that comprises an inter-layer dielectric layer with first and second nitride layer over stacked structure
- Patent Title (中): 制造包括半导体存储器的电子器件，该半导体存储器包括层叠结构之后的第一和第二氮化物层的层间电介质层
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Application No.: US14571235Application Date: 2014-12-15
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Publication No.: US09478739B2Publication Date: 2016-10-25
- Inventor: Seong-Hyun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2014-0082904 20140703
- Main IPC: G06F3/00
- IPC: G06F3/00 ; H01L45/00 ; G06F3/06 ; G06F12/08 ; G06F5/14 ; H01L21/768 ; C23C16/40
Abstract:
An electronic device includes a semiconductor memory that includes: an inter-layer dielectric layer including a hole over a substrate; a first nitride layer disposed on sidewalls of the hole; a selector disposed in a bottom portion of the hole and over the first nitride layer on the sidewalls of the hole; a stacked structure including a variable resistance pattern disposed over a lower structure including the selector; and a second nitride layer disposed in an upper portion and on sidewalls of the stacked structure.
Public/Granted literature
- US20160005963A1 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-01-07
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