Invention Grant
US09478944B2 Semiconductor laser element and method of manufacturing semiconductor laser element
有权
半导体激光元件及半导体激光元件的制造方法
- Patent Title: Semiconductor laser element and method of manufacturing semiconductor laser element
- Patent Title (中): 半导体激光元件及半导体激光元件的制造方法
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Application No.: US14460090Application Date: 2014-08-14
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Publication No.: US09478944B2Publication Date: 2016-10-25
- Inventor: Hidehiro Taniguchi , Hirotatsu Ishii , Takeshi Namegaya
- Applicant: Furukawa Electric Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: FURUKAWA ELECTRIC CO., LTD.
- Current Assignee: FURUKAWA ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01S5/16
- IPC: H01S5/16 ; H01S5/30 ; H01S5/20 ; H01S5/042 ; H01S5/32 ; H01S5/34
Abstract:
A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.
Public/Granted literature
- US20160276804A1 SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT Public/Granted day:2016-09-22
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