Invention Grant
US09482720B2 Non-invasive pre-bond TSV test using ring oscillators and multiple voltage levels
有权
使用环形振荡器和多个电压电平的非侵入性前置键合TSV测试
- Patent Title: Non-invasive pre-bond TSV test using ring oscillators and multiple voltage levels
- Patent Title (中): 使用环形振荡器和多个电压电平的非侵入性前置键合TSV测试
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Application No.: US13767089Application Date: 2013-02-14
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Publication No.: US09482720B2Publication Date: 2016-11-01
- Inventor: Krishnendu Chakrabarty , Sergej Deutsch
- Applicant: DUKE UNIVERSITY
- Applicant Address: US NC Durham
- Assignee: DUKE UNIVERSITY
- Current Assignee: DUKE UNIVERSITY
- Current Assignee Address: US NC Durham
- Agency: Talem IP Law, LLP
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R31/3185

Abstract:
A design for test (DfT) architecture is provided that enables pre-bond parametric testing of through-silicon vias (TSVs). A grouping of N number of input/output (I/O) segments are configured to receive a test signal in a feedback loop, where each I/O segment includes one or more buffers (or inverters) and a TSV connected at one end to the one or more buffers. The TSV acts as a shunt-connected capacitor—when defect free—and includes a load resistance when the TSV contains a defect. Each I/O segment can also include one or two multiplexers to control whether the I/O segment receives a test or functional signal and, optionally, whether the I/O segment is bypassed or included in the ring oscillator. The varying loads caused by the defects cause variations in the delay across the buffers (or inverters) of an I/O segment that can be detected in the output signal.
Public/Granted literature
- US20140225624A1 NON-INVASIVE PRE-BOND TSV TEST USING RING OSCILLATORS AND MULTIPLE VOLTAGE LEVELS Public/Granted day:2014-08-14
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