Invention Grant
- Patent Title: Circuit having capacitor coupled with memory element
- Patent Title (中): 具有与存储元件耦合的电容器的电路
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Application No.: US14446501Application Date: 2014-07-30
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Publication No.: US09484067B2Publication Date: 2016-11-01
- Inventor: Ching-Hao Shaw , Subramani Kengeri
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: G11C29/52
- IPC: G11C29/52 ; G11C5/00 ; G11C11/412 ; H01L23/522 ; H01L27/10 ; H01L27/105 ; H01L49/02 ; G11C11/417 ; H01L23/556 ; H01L27/06 ; H01L27/11

Abstract:
A circuit includes a capacitor and a memory element. The capacitor includes a first conductive layer, a first terminal, and a second terminal. The first conductive layer includes a first plurality of bars extending along a first direction and parallel to one another, where two adjacent bars of the first plurality of bars have a first capacitance therebetween. The first terminal is coupled with a first bar of the two adjacent bars, and the second terminal is coupled with a second bar of the two adjacent bars. The memory element has an input coupled with the first terminal and an output coupled with the second terminal. The capacitor is configured to inhibit changing a logic state at the input of the memory element.
Public/Granted literature
- US20140339618A1 CIRCUIT HAVING CAPACITOR COUPLED WITH MEMORY ELEMENT Public/Granted day:2014-11-20
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