Invention Grant
US09484071B2 Voltage generation circuit, semiconductor memory apparatus having the same, and operating method thereof
有权
电压产生电路，具有该电压产生电路的半导体存储装置及其操作方法
- Patent Title: Voltage generation circuit, semiconductor memory apparatus having the same, and operating method thereof
- Patent Title (中): 电压产生电路，具有该电压产生电路的半导体存储装置及其操作方法
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Application No.: US14727053Application Date: 2015-06-01
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Publication No.: US09484071B2Publication Date: 2016-11-01
- Inventor: Hyun Jong Jin
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-Si
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon-Si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2015-0038203 20150319
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G05F1/625
Abstract:
A voltage generation circuit may include: a comparison unit configured to compare a reference voltage and a feedback voltage and output a comparison signal to a node; an output unit configured to generate an internal voltage and the feedback voltage according to a voltage level applied to the node; and a control unit configured to discharge the node when a level of the internal voltage drops to less than a preset level.
Public/Granted literature
- US20160275997A1 VOLTAGE GENERATION CIRCUIT, SEMICONDUCTOR MEMORY APPARATUS HAVING THE SAME, AND OPERATING METHOD THEREOF Public/Granted day:2016-09-22
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