Invention Grant
- Patent Title: Semiconductor device having transistor and semiconductor memory device using the same
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Application No.: US14964031Application Date: 2015-12-09
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Publication No.: US09484081B2Publication Date: 2016-11-01
- Inventor: Young-Hoon Cho
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0141949 20121207
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/4094 ; G11C7/12 ; G11C11/408
Abstract:
Semiconductor device capable of preventing off-leakage of the transistor may include a pulse voltage generator configured to generate a pulse voltage, and a transistor configured to have a gate provided with the pulse voltage. The transistor is in an off state in response to the pulse voltage.
Public/Granted literature
- US20160086653A1 SEMICONDUCTOR DEVICE HAVING TRANSISTOR AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME Public/Granted day:2016-03-24
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