Invention Grant
- Patent Title: Semiconductor device and semiconductor storage device
- Patent Title (中): 半导体器件和半导体存储器件
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Application No.: US14611970Application Date: 2015-02-02
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Publication No.: US09484083B2Publication Date: 2016-11-01
- Inventor: Shinichi Moriwaki
- Applicant: Socionext, Inc.
- Applicant Address: JP Yokohama
- Assignee: Socionext, Inc.
- Current Assignee: Socionext, Inc.
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2014-069438 20140328
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G11C11/417 ; G11C5/02 ; G11C5/14

Abstract:
A semiconductor device includes a circuit block that is switchable between selection and non-selection, and a leakage current control circuit disposed between the circuit block and a first power supply line. The leakage current control circuit includes a first transistor disposed between the circuit block and the first power supply line, and a resistor device disposed between the circuit block and the first power supply line.
Public/Granted literature
- US20150279449A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2015-10-01
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