Invention Grant
- Patent Title: Ternary content-addressable memory
- Patent Title (中): 三进制内容可寻址内存
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Application No.: US14954935Application Date: 2015-11-30
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Publication No.: US09484096B1Publication Date: 2016-11-01
- Inventor: Chien-Fu Chen , Chien-Chen Lin , Meng-Fan Chang
- Applicant: NATIONAL TSING HUA UNIVERSITY
- Applicant Address: TW Hsinchu
- Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee Address: TW Hsinchu
- Agency: Li & Cai Intellectual Property (USA) Office
- Main IPC: G11C15/00
- IPC: G11C15/00 ; G11C15/04

Abstract:
A ternary content-addressable memory comprises a first switch, a first static random-access memory cell, a second switch and a second static random-access memory cell. The first switch is connected between a first search line and a match line. The first switch has a first control electrode. The first static random-access memory cell has a first storage node connected to the first control electrode of the first switch. The second switch is connected between a second search line and the match line. The second switch has a second control node. The second static random-access memory cell has a second storage node connected to the second control electrode of the second switch.
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