Invention Grant
- Patent Title: Integrated circuit, semiconductor memory device, and operating method thereof
- Patent Title (中): 集成电路，半导体存储器件及其操作方法
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Application No.: US14078048Application Date: 2013-11-12
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Publication No.: US09484108B2Publication Date: 2016-11-01
- Inventor: Sang Oh Lim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0082903 20130715
- Main IPC: G11C16/30
- IPC: G11C16/30 ; G11C16/26
Abstract:
An integrated circuit includes an internal circuit including a input/output unit suitable for inputting/outputting data, and a voltage supplying circuit suitable for supplying a first operating voltage to the internal circuit in response to a first control signal during a general operation, and supplying a second operating voltage that is higher than the first operating voltage to the input/output unit in response to a second control signal during an output of the data.
Public/Granted literature
- US20150019886A1 INTEGRATED CIRCUIT, SEMICONDUCTOR MEMORY DEVICE, AND OPERATING METHOD THEREOF Public/Granted day:2015-01-15
Information query
