Invention Grant
US09484200B2 Oxide sputtering target, thin film transistor using the same, and method for manufacturing thin film transistor
有权
氧化物溅射靶，使用其的薄膜晶体管，以及薄膜晶体管的制造方法
- Patent Title: Oxide sputtering target, thin film transistor using the same, and method for manufacturing thin film transistor
- Patent Title (中): 氧化物溅射靶，使用其的薄膜晶体管，以及薄膜晶体管的制造方法
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Application No.: US14049422Application Date: 2013-10-09
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Publication No.: US09484200B2Publication Date: 2016-11-01
- Inventor: Katsushi Kishimoto , Takayuki Fukasawa
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2013-0061990 20130530
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/78 ; H01L21/02 ; H01L29/786 ; H01L29/66 ; C23C14/34
Abstract:
A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.
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