Invention Grant
- Patent Title: Semiconductor die singulation method
- Patent Title (中): 半导体芯片分离方法
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Application No.: US14690972Application Date: 2015-04-20
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Publication No.: US09484210B2Publication Date: 2016-11-01
- Inventor: William F. Burghout , Dennis Lee Conner , Michael J. Seddon , Jay A. Yoder , Gordon M. Grivna
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Kevin B. Jackson
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/304 ; H01L21/3065 ; H01L21/02 ; H01L21/67
Abstract:
In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer using a fluid.
Public/Granted literature
- US20150228494A1 SEMICONDUCTOR DIE SINGULATION METHOD Public/Granted day:2015-08-13
Information query
IPC分类:
