Etchant and etching process

Invention Grant

US09484211B2 Etchant and etching process 有权

Title translation: 蚀刻和蚀刻工艺

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Patent Title: Etchant and etching process
Patent Title (中): 蚀刻和蚀刻工艺
Application No.: US13749388

Application Date: 2013-01-24
Publication No.: US09484211B2

Publication Date: 2016-11-01
Inventor: Wan-Yu Lee , Ying-Hao Kuo , Hai-Ching Chen , Tien-I Bao
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater Matsil, LLP
Main IPC: H01L21/306
IPC: H01L21/306 ; C09K13/02 ; G02B6/42

Abstract:

A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45° angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

Abstract(Chinese):

提供一种用于制造半导体器件的系统和方法。一个实施例包括使用蚀刻剂去除衬底的一部分以形成与衬底的主表面成45°角的开口。蚀刻剂包括碱，表面活性剂和氧化剂。氧化剂可以是过氧化氢。

Public/Granted literature

US20140206191A1 Etchant and Etching Process Public/Granted day:2014-07-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）