Invention Grant
- Patent Title: Processing gas diffusing and supplying unit and substrate processing apparatus
- Patent Title (中): 加工气体扩散供给单元和基板处理装置
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Application No.: US13838468Application Date: 2013-03-15
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Publication No.: US09484213B2Publication Date: 2016-11-01
- Inventor: Toshifumi Ishida
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Minato-ku
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-056432 20080306
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01L21/3065 ; H01J37/32

Abstract:
A processing gas diffusing and supplying unit is provided in a substrate processing unit including a processing chamber for accommodating a substrate. The processing gas diffusing and supplying unit comprises a main body; a plate supported by the main body and having a plurality of gas supply holes; a partition wall; an internal space having a first and a second space partitioned by the partition wall; a first and a second opening respectively communicating with the first and the second space while facing the plate, first and a second space being connected to a first and a second processing gas introducing pipe of the processing chamber, respectively; and a first and a second shielding portion respectively installed in the first and the second space and having a surface facing the first and the second opening.
Public/Granted literature
- US20130199729A1 PROCESSING GAS DIFFUSING AND SUPPLYING UNIT AND SUBSTRATE PROCESISNG APPARATUS Public/Granted day:2013-08-08
Information query
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