A first field effect transistor (FET) device includes a first gate over a first channel region of a first fin arranged on a substrate, a second gate of a second FET device over a second channel region of a second fin arranged on the substrate, the second channel region having a width that is greater than a width of the first channel region, a first cavity that exposes an active region of the first FET device and a second cavity that exposes an active region of the second FET device, and a conductive material in the first cavity to define a first contact and a conductive material in the second cavity to define a second contact, the second contact having a width that is greater than a width of the first contact.