Invention Grant
US09484269B2 Structure and method to control bottom corner threshold in an SOI device
有权
在SOI器件中控制底角阈值的结构和方法
- Patent Title: Structure and method to control bottom corner threshold in an SOI device
- Patent Title (中): 在SOI器件中控制底角阈值的结构和方法
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Application No.: US12822492Application Date: 2010-06-24
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Publication No.: US09484269B2Publication Date: 2016-11-01
- Inventor: Joseph Ervin , Jeffrey B. Johnson , Kevin McStay , Paul C. Parries , Chengwen Pei , Geng Wang , Yanli Zhang
- Applicant: Joseph Ervin , Jeffrey B. Johnson , Kevin McStay , Paul C. Parries , Chengwen Pei , Geng Wang , Yanli Zhang
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent David Cain; Andrew M. Calderon
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/8242 ; H01L21/84 ; H01L21/762 ; H01L27/108
Abstract:
Semiconductor structures and methods to control bottom corner threshold in a silicon-on-insulator (SOI) device. A method includes doping a corner region of a semiconductor-on-insulator (SOI) island. The doping includes tailoring a localized doping of the corner region to reduce capacitive coupling of the SOI island with an adjacent structure.
Public/Granted literature
- US20110316061A1 STRUCTURE AND METHOD TO CONTROL BOTTOM CORNER THRESHOLD IN AN SOI DEVICE Public/Granted day:2011-12-29
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