Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14314779Application Date: 2014-06-25
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Publication No.: US09484308B2Publication Date: 2016-11-01
- Inventor: Ming-Kai Liu , Chao-Wen Shih , Yung-Ping Chiang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agent Chun-Ming Shih
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/544 ; H01L23/00 ; H01L23/58 ; H01L23/31

Abstract:
A semiconductor device includes a substrate including a pad and an alignment feature disposed over the substrate, a passivation disposed over the substrate and a periphery of the pad, a post passivation interconnect (PPI) including a via portion disposed on the pad and an elongated portion receiving a conductive bump to electrically connect the pad with the conductive bump, a polymer covering the PPI, and a molding material disposed over the polymer and around the conductive bump, wherein the molding material comprises a first portion orthogonally aligned with the alignment feature and adjacent to an edge of the semiconductor device and a second portion distal to the edge of the semiconductor device, a thickness of the first portion is substantially smaller than a thickness of the second portion, thereby the alignment feature is visible through the molding material under a predetermined radiation.
Public/Granted literature
- US20150380357A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-12-31
Information query
IPC分类: