Invention Grant
- Patent Title: Semiconductor apparatus
- Patent Title (中): 半导体装置
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Application No.: US14186594Application Date: 2014-02-21
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Publication No.: US09484344B2Publication Date: 2016-11-01
- Inventor: Ji Tai Seo , Yeon Ok Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynic Inc.
- Current Assignee: SK hynic Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0148462 20131202
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L29/94 ; H01L27/108
Abstract:
A semiconductor apparatus includes a reservoir capacitor, and the reservoir capacitor includes a plurality of MOS capacitors serially coupled to one another. The plurality of MOS capacitors are arranged in one well.
Public/Granted literature
- US20150155278A1 SEMICONDUCTOR APPARATUS Public/Granted day:2015-06-04
Information query
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