Invention Grant
US09484377B2 CMOS image sensor including infrared pixels having improved spectral properties, and method of manufacturing same
有权
包括具有改进的光谱特性的红外像素的CMOS图像传感器及其制造方法
- Patent Title: CMOS image sensor including infrared pixels having improved spectral properties, and method of manufacturing same
- Patent Title (中): 包括具有改进的光谱特性的红外像素的CMOS图像传感器及其制造方法
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Application No.: US14649710Application Date: 2013-11-15
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Publication No.: US09484377B2Publication Date: 2016-11-01
- Inventor: Jun Ho Won , Won Ho Lee , Do Young Lee
- Applicant: SiliconFile Technologies Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SiliconFile Technologies Inc.
- Current Assignee: SiliconFile Technologies Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0139416 20121204
- International Application: PCT/KR2013/010396 WO 20131115
- International Announcement: WO2014/088238 WO 20140612
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N9/04
Abstract:
The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.
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