Invention Grant
- Patent Title: Capacitance reduction for advanced technology nodes
- Patent Title (中): 先进技术节点的电容减少
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Application No.: US14551279Application Date: 2014-11-24
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Publication No.: US09484401B2Publication Date: 2016-11-01
- Inventor: Injo Ok , Balasubramanian Pranatharthiharan , Charan Veera Venkata Satya Surisetty
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/417 ; H01L29/78 ; H01L29/66

Abstract:
After forming source/drain contact trenches to expose source/drain regions, contact liner material layer portions are formed on sidewalls and bottom surfaces of the source/drain contact trenches. Contact material layer portions are then formed over the contact liner material layer portions to fill in the source/drain contact trenches. At least portions of the contact material layer portions and the contact liner material layer portions present on sidewalls of the source/drain contact trenches are removed to provide source/drain contacts with reduced contact capacitance.
Public/Granted literature
- US20160148999A1 CAPACITANCE REDUCTION FOR ADVANCED TECHNOLOGY NODES Public/Granted day:2016-05-26
Information query
IPC分类: