Invention Grant
US09484403B2 Boron rich nitride cap for total ionizing dose mitigation in SOI devices
有权
富硼氮化物帽用于SOI器件中的总电离剂量减轻
- Patent Title: Boron rich nitride cap for total ionizing dose mitigation in SOI devices
- Patent Title (中): 富硼氮化物帽用于SOI器件中的总电离剂量减轻
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Application No.: US14939358Application Date: 2015-11-12
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Publication No.: US09484403B2Publication Date: 2016-11-01
- Inventor: Alfred Grill , Deborah A. Neumayer , Kenneth P. Rodbell
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/12 ; H01L21/331 ; H01L29/06 ; H01L21/02 ; H01L21/762
Abstract:
A semiconductor-on-insulator (SOI) structure that includes a cap layer composed of a boron-rich compound or doped boron nitride located between a top semiconductor layer and a buried insulator layer is provided. The cap layer forms a conductive path between the top semiconductor layer and the buried insulator layer in the SOI structure to dissipate total ionizing dose (TID) accumulated charges, thus advantageously mitigating TID effects in fully depleted SOI transistors.
Public/Granted literature
- US20160064481A1 BORON RICH NITRIDE CAP FOR TOTAL IONIZING DOSE MITIGATION IN SOI DEVICES Public/Granted day:2016-03-03
Information query
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