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US09484406B1 Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications 有权
用于制造用于半导体应用的器件的水平栅极的纳米线的方法

Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
Abstract:
The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, and selectively forming an oxidation layer on the second group of sidewalls in the second layer.
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